AVS 49th International Symposium
    Surface Science Thursday Sessions
       Session SS+EL+OF-ThM

Invited Paper SS+EL+OF-ThM3
Formation of Nanoscale Organic and Inorganic Features on Semiconductor Surfaces

Thursday, November 7, 2002, 9:00 am, Room C-112C

Session: Reactions and Patterning of Organics on Silicon
Presenter: J.M. Buriak, Purdue University
Correspondent: Click to Email

Integration of molecular devices and nanoscale materials with semiconductors, including silicon and germanium, is an area of intense interest, due to the potential for interfacing nanomaterials with the macroworld. We have developed a number of wet chemical routes which allow for covalent attachment of both organic functionalities, including molecular wires, and inorganic nanoparticles. For instance, a cathodic electrografting reaction between alkynes and hydride-terminated silicon surfaces results in alkynyl moieties bound directly through Si-C bonds, with no intervening oxide layer. The surfaces are air and water stable, and can withstand boiling pH 12 solutions. In order to pattern these alkynyl groups on the silicon surface in nanoscale regions, conducting probe lithography has been utilized to write the organic monolayers, with feature sizes as small as 30 nm. For inorganic structure patterning, electroless deposition has been combined with microcontact printing, dip pen nanolithography (DPN), and UV-mediated hydrometallation to produce nano- and micron-scale features. These approaches and others will be described.