AVS 49th International Symposium
    Plasma Science Tuesday Sessions
       Session PS-TuP

Paper PS-TuP20
Energetic CF@sub 3@@super +@ and F@super +@ Bombardments of Si Surfaces using Molecular Dynamics Simulations

Tuesday, November 5, 2002, 5:30 pm, Room Exhibit Hall B2

Session: Plasma Applications
Presenter: J.J. Seo, Chung-Ang University, Korea
Authors: J.J. Seo, Chung-Ang University, Korea
J.W. Kang, Chung-Ang University, Korea
H.J. Hwang, Chung-Ang University, Korea
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Classical molecular dynamics (MD) simulations for Si etching by energetic fluorocarbon and fluorine ions have been performed to study surface ion reaction mechanisms for plasma etching. The Si-C-F potential function developed by Abrams and Graves was used to describe surface-atom interaction, which is based on the tersoff formalism. When CF@sub 3@@super +@ ions impacted sequentially on a Si substrate with incident energies of 50, 100 and 200 eV at normal incidence, we have observed that a mixed layer of CF@sub 3@@super +@ ions and Si is formed on the surface. Our results also showed that the thickness of F coverage increases and then it is saturated, as the Si surface is irradiated with F@super +@ ions. Etch rates and selectivities obtained from MD simulations was compared with available experimental data and another simulation result.