During semiconductor processing, fluorocarbon plasmas are commonly used for dielectric etching. As model-based reactor design and process development become more prevalent, data is needed for model development and validation. The translational temperature in a plasma can vary spatially, leading to spatial variations in gas density and reaction rates. Spatial mapping of these temperature variations would provide useful information for modelers. In this work, 2-D temperature maps in fluorocarbon plasmas, measured using planar laser-induced fluorescence (PLIF) of the CF radical, will be presented. Measurements are made in the capacitively-coupled Gaseous Electronics Conference rf Reference Reactor in CF@sub 4@ plasmas at various power levels at 200 mTorr. PLIF has previously been used to measure spatial maps of CF@sub 2@@footnote 1@ and CF radicals in fluorocarbon plasmas, by exciting the species with a laser sheet and imaging the fluorescence using an intensified CCD camera. In this variation of the PLIF technique, multiple spatial maps are imaged for the same plasma, exciting a different rotational line of the CF radical for each image. The fluorescence intensity map in each image is related to the rotational population in the probed CF ground state rotational level. Assuming a Boltzmann distribution, the ratio of image intensities can used to calculate the rotational temperature of CF, which is expected to be in equilibrium with the plasma's translational temperature under these conditions. @FootnoteText@ @footnote 1@ K. L. Steffens and M. A. Sobolewski, J. Vac. Sci. Technol. A 17(2) 517 (1999).