AVS 49th International Symposium
    Processing at the Nanoscale Thursday Sessions
       Session PN-ThA

Paper PN-ThA1
Nanoscale Electron Beam Stimulated Processing

Thursday, November 7, 2002, 2:00 pm, Room C-109

Session: Charged Particle Patterning and Emission
Presenter: P.D. Rack, University of Tennessee
Authors: P.D. Rack, University of Tennessee
R.C. Burns, University of Tennessee
Y. Deng, University of Tennessee
Y. Choi, University of Tennessee
D.C. Joy, University of Tennessee
Correspondent: Click to Email
The ability to manipulate materials at the nanoscale is critical for the nanotechnology revolution that is occurring. To intelligently design and or repair nanoscale devices requires techniques to selectively and nanoscopically deposit and remove material in a controllable fashion. Current techniques to selectively deposit or etch microscopic features utilize ion beam deposition and etching, laser ablative etching using far field and near field optics, and mechanical abrasion using a fine microtip. In this paper we will discuss electron stimulated nanoscale processing. The experimental set-up for the process will be presented and experimental results for electron stimulated nanoscale processing will be shown. The relevant electron-solid, electron-gas, and gas-solid interactions that are critical for nanoscale electron beam processing will be discussed. The effect that the beam energy has on the reaction rate for stimulated deposition and etching will be illustrated and the growth kinetics will be discussed. To minimize the effective spot size, strategies to control surface diffusion as well as electron-gas scattering will also be discussed.