AVS 49th International Symposium
    Microelectromechanical Systems (MEMS) Wednesday Sessions
       Session MM-WeP

Paper MM-WeP6
Mitigation of Residual Film Stress Deformation in Multi-Layer MEMS Devices

Wednesday, November 6, 2002, 11:00 am, Room Exhibit Hall B2

Session: Poster Session
Presenter: J. Pulskamp, U.S. Army Research Laboratory
Authors: J. Pulskamp, U.S. Army Research Laboratory
B. Piekarski, U.S. Army Research Laboratory
R.G. Polcawich, U.S. Army Research Laboratory
A. Wickenden, U.S. Army Research Laboratory
M. Dubey, U.S. Army Research Laboratory
Correspondent: Click to Email
An approach to compensate for the residual thin film stress deformation of multi-layer MEMS devices is presented based upon analytical modeling and in-process thin film characterization. Thermal and intrinsic deposition stresses can lead to the warping of released MEMS structures. This detrimental phenomenon in many cases can prevent proper device operation. Ellispsometric and laser wafer bow measurements yield thickness and film stress values that are used to update the deflection model during device fabrication; allowing for the compensation of the fabrication process variability. The derivations of linear and nonlinear residual film stress induced deflection models are presented. These models are based upon Bernoulli-Euler beam theory and are thus restricted to the associated geometric constraints. The models are initially validated by comparison with surface micro-machined sol-gel PZT (Lead-Zirconate-Titanate) cantilever structures; with initial experimental results agreeing well with both models.