IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Thin Films Tuesday Sessions

Session TF-TuA
Growth and Properties of Thin Films

Tuesday, October 30, 2001, 2:00 pm, Room 123
Moderator: P. Barna, Hungarian Academy of Sciences


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

2:00pm TF-TuA1 Invited Paper
Mechanical Properties and Stresses in Ion-Assisted Thin Films
G.S. Was, University of Michigan
2:40pm TF-TuA3
Growth of Highly-Oriented CeO@sub 2@ Layers on Glass Substrates for High-Quality Poly-Si Overlayer Formation
N. Sakamoto, T. Inoue, T. Suzuki, S. Shida, Iwaki Meisei University, Japan, K. Kato, Fukushima Technology Centre, Japan
3:20pm TF-TuA5
Thin Film Growth of Reactive Sputter Deposited Tungsten-Carbon Thin Films
P.D. Rack, Rochester Institute of Technology, J.J. Peterson, J. Li, Advanced Vision Technologies, H.J. Rack, A.C. Geiculescu, Clemson University
3:40pm TF-TuA6
Reactive Sputter Deposition of Tungsten Nitride Thin Films
C. Baker, S.I. Shah, University of Delaware
4:00pm TF-TuA7
The Impact of Residual By-Products from Tungsten Film Deposition on Process Integration due to Non-Uniformity of the Tungsten Film
A. Sidhwa, STMicroelectronics, Inc. and University of Arkansas, C. Spinner, T. Gandy, S. Melosky, STMicroelectronics, Inc., W. Brown, S. Ang, H. Naseem, R. Ulrich, University of Arkansas
4:20pm TF-TuA8
Thermal Stability of Arc Evaporated Ti@sub 1-x@Al@sub x@N Thin Films
A. Hörling, L. Hultman, M. Odén, Linköping University, Sweden, G. Ramanath, Rensselaer Polytechnic Institute, P.H. Mayrhofer, C. Mitterer, University of Leoben, Austria, J. Sjölén, L. Karlsson, Seco Tools, Sweden
4:40pm TF-TuA9
Evolution of Ti-3Al Film Structures and its Effect on Film Properties
C.-F. Lo, D. Draper, P. McDonald, P. Gilman, Praxair-MRC
5:00pm TF-TuA10
Surface Structural Anisotropy in Sputter and Electrolytic Deposited Tantalum Films
S.L. Lee, US Army Armament Research Development and Engineering Center, D. Windover, Rensselaer Polytechnic Institute