IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Thin Films Tuesday Sessions
       Session TF-TuA

Paper TF-TuA3
Growth of Highly-Oriented CeO@sub 2@ Layers on Glass Substrates for High-Quality Poly-Si Overlayer Formation

Tuesday, October 30, 2001, 2:40 pm, Room 123

Session: Growth and Properties of Thin Films
Presenter: N. Sakamoto, Iwaki Meisei University, Japan
Authors: N. Sakamoto, Iwaki Meisei University, Japan
T. Inoue, Iwaki Meisei University, Japan
T. Suzuki, Iwaki Meisei University, Japan
S. Shida, Iwaki Meisei University, Japan
K. Kato, Fukushima Technology Centre, Japan
Correspondent: Click to Email
In order to realize high-performance thin-film transistors, tremendous efforts have been made for growth of high quality polycrystalline Si (poly-Si) films on glass substrates. CeO@sub 2@ films on glass substrates have a potential advantage in attaining high-quality poly-Si overlayers without supplementary crystallization processes such as solid phase crystallization, excimer laser annealing and metal induced lateral crystallization. Systematic experiments varying growth temperature (room temperature 750°C) reveal that orientation controlled CeO@sub 2@ layers can be obtained. CeO@sub 2@ layers with strong (111)-tendency grow in low temperature region, whereas those with (100)-orientation grow at higher temperatures. Comparing conventional evaporation and electron-beam-assisted evaporation,@footnote 1@ the latter gives grain size enlargement and crystallization enhancement. For the films grown by electron-beam-assisted evaporation, the grain size estimated from the full width at half maximum of XRD peaks is 1.1-1.4 times larger than those grown by conventional evaporation. It is verified that poly-Si films with strong (111)-orientation are successfully formed on CeO@sub 2@/glass structures grown at room temperature. @FootnoteText@ @footnote 1@ T. Inoue, Y. Yamamoto, and M. Satoh, J. Vac. Sci. Technol. A, Vol. 19, Jan/Feb (2001) 275.