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    Thin Films Tuesday Sessions
       Session TF-TuA

Paper TF-TuA9
Evolution of Ti-3Al Film Structures and its Effect on Film Properties

Tuesday, October 30, 2001, 4:40 pm, Room 123

Session: Growth and Properties of Thin Films
Presenter: C.-F. Lo, Praxair-MRC
Authors: C.-F. Lo, Praxair-MRC
D. Draper, Praxair-MRC
P. McDonald, Praxair-MRC
P. Gilman, Praxair-MRC
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The evolution of Ti-Alx film structure deposited from the Ti-75at%Al (Ti-3Al) sputter targets was investigated. 300nm, 900nm and 9000nm thick films were deposited on three inch diameter silicon wafers at various wafer temperatures from 20°C to 400°C. The films were evaluated for composition, microstructure, crystallinity, hardness and elastic modulus using the FE-SEM, XRD and nano-indentation instrument. In order to understand the effect of the target structure on film properties, the target manufacturing process for the Ti-75 at%Al (Ti-3Al) alloy system was controlled to prepared two four inch diameter targets, one metallic (Ti+3Al) and one intermetallic (TiAl@sub 3@) structures. No effect of target structure and sputtering conditions on the composition of the deposited films was observed. The film compositions were similar to that of the sputtered targets. At a film thickness 300nm and less, the grains showed an equiaxial shape with size about 40nm. The columnar grains generated and grew with increasing of film thickness. The diameter of the columnar grains increased with increasing of film thickness. The target structure showed some effect on the morphology but not on the diameter of columnar grains. XRD analysis showed that TiAl was the major phase existing in all the tested films. The hardness and elastic modulus measurements showed that the mechanical properties of the deposited films were effected by the film microstructure.