| IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11) | |
| Semiconductors | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | SC+SS-ThA1 Invited Paper Direct Surface Structural Determination using Correlated Thermal Diffuse Scattering T. Abukawa, Tohoku University, Japan |
| 2:40pm | SC+SS-ThA3 Atomic Structures of the of InP (111) Surface C.H. Li, D.C. Law, University of California, Los Angeles, L. Li, University of Wisconsin, Milwaukee, R.F. Hicks, University of California, Los Angeles |
| 3:00pm | SC+SS-ThA4 Surface Stress and the Morphology of Si(111) near Tc J.B. Hannon, J. Tersoff, R.M. Tromp, IBM Research Division |
| 3:20pm | SC+SS-ThA5 Origin of the Wide Si(7 7 17) Domain Parasitic on Si(5 5 12) Surface S.H. Cho, J. Zhang, J.M. Seo, Chonbuk National University, Korea |
| 3:40pm | SC+SS-ThA6 First-Principles Study of Thermal Fluctuation of Si(111)@sr@3 X @sr@3 - Ag Surface Appeared in Non contact AFM Images M. Tsukada, N. Sasaki, S. Watanabe, University of Tokyo, Japan |
| 4:40pm | SC+SS-ThA9 Adsorption of C@sub 2@H@sub 2@ on Si(100) - New High Resolution Core-level Photoemission and Photoelectron Diffraction Results M. Kittel, M. Polcik, J.-T. Hoeft, D.I. Sayago, Fritz-Haber-Institut der MPG, Germany, R.L. Toomes, D.P. Woodruff, University of Warwick, UK |
| 5:00pm | SC+SS-ThA10 The Effect of an As-flux on the Surface Structure During the Growth of Si on GaAs(001) c(4x4) T.A.R. Müller, B.D. Schultz, University of Minnesota, H.H. Farrell, Idaho National Engineering and Environmental Laboratory, A. Franciosi, Universita' di Trieste, Italy and Univ. of Minnesota, C.J. Palmstrom, University of Minnesota |