IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Semiconductors Thursday Sessions
       Session SC+SS-ThA

Paper SC+SS-ThA5
Origin of the Wide Si(7 7 17) Domain Parasitic on Si(5 5 12) Surface

Thursday, November 1, 2001, 3:20 pm, Room 111

Session: Semiconductor Surface Structure
Presenter: S.H. Cho, Chonbuk National University, Korea
Authors: S.H. Cho, Chonbuk National University, Korea
J. Zhang, Chonbuk National University, Korea
J.M. Seo, Chonbuk National University, Korea
Correspondent: Click to Email
Recently the high-index and single-domain Si(5 5 12) has attracted much attention due to its potential application as a template for one dimensional nanowire fabrication. However, another high-index and single-domain (7 7 17) plane has not been reported yet, although they have similar plane directions of only 0.3 degree off and commonly consist of (2 2 5) and (3 3 7) sections [i.e., (5 5 12)=2x(3 3 7)+(2 2 5) and (7 7 17)= (3 3 7)+(2 2 5)]. From the recent STM investigation on Si(5 5 12), we have detected the wide Si(7 7 17) domains parasitic on Si(5 5 12). Most of wide (7 7 17) domains appear in the terrace adjacent to the step parallel to (-1 1 0) row direction. In a single terrace, the (7 7 17) domain extends to a few hundreds Angstrom from the step, then transforms to (5 5 12). Some (7 7 17) domains are also detected from the bent surface without steps. These wide and pure (7 7 17) domains, appearing near the step or on the bent surfaces, are experiencing the compressed stresses, and these excessive stresses replace the compressed stress originating from a (3 3 7) section in (5 5 12). Therefore, the extra (3 3 7) section is not required in a (5 5 12) plane under such stresses, which results in (7 7 17) domain until such local compressed stresses are released.