IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Semiconductors Thursday Sessions
       Session SC+SS-ThA

Paper SC+SS-ThA3
Atomic Structures of the of InP (111) Surface

Thursday, November 1, 2001, 2:40 pm, Room 111

Session: Semiconductor Surface Structure
Presenter: C.H. Li, University of California, Los Angeles
Authors: C.H. Li, University of California, Los Angeles
D.C. Law, University of California, Los Angeles
L. Li, University of Wisconsin, Milwaukee
R.F. Hicks, University of California, Los Angeles
Correspondent: Click to Email
The atomic structure of the indium-terminated InP (111), prepared by metalorganic vapor-phase epitaxy (MOVPE), has been characterized by scanning tunneling microscopy (STM), low energy electron diffraction (LEED), and x-ray photoemission spectroscopy (XPS). Three reconstructions are observed depending on the MOVPE process conditions and temperature of annealing in vacuum after growth: these are the (rt3xrt3), (2x2) and (1x1). The (rt3xrt3) reconstruction is the most interesting of these and consists of one ad-atom per unit cell resting on a full layer of indium atoms. This structure is stabilized by the incorporation of oxygen atoms, which are gettered from the MOVPE environment by the indium-rich surface. At the meeting, the atomic structure of each InP (111) reconstruction will be described and compared to those observed on the gallium-rich GaAs (111) and GaN (0001) surfaces.