| IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11) | |
| Plasma Science | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS-ThA1 Invited Paper Predicitve Profile Evolution Simulation in Plasma Etching V. Vahedi, D. Cooperberg, L.B. Braly, R.A. Gottscho, Lam Research Corporation |
| 2:40pm | PS-ThA3 Investigation of Fluorocarbon PECVD from c-C4F8 for use as Passivation during Deep Silicon Etching C.B. Labelle, V.M. Donnelly, G.R. Bogart, R.L. Opila, A.M. DeSantolo, A. Kornblit, Agere Systems |
| 3:00pm | PS-ThA4 Ions in Holes - Experimental Measurements of Ion Trajectories Inside Surface Features on rf-biased Wafers J.R. Woodworth, Sandia National Laboratories, I.C. Abraham, Intel Corporation, P.A. Miller, R.J. Shul, B.P. Aragon, T.W. Hamilton, C.G. Willison, Sandia National Laboratories |
| 3:20pm | PS-ThA5 Gate Etching for ULSI Technology : Critical Dimension Control in the sub 0.1 µm Regime X. Detter, L. Vallier, L. Cunge, O. Joubert, CNRS/LTM, France, R. Palla, I. Thomas-Boutherin, ST Microelectronics, France, T. Lill, Applied Materials |
| 4:00pm | PS-ThA7 Determination of the Mechanisms Involved in the Creation of the Bowing during the Etching of Deep Anisotropic Trenches in an ICP Reactor M. Boufnichel, F. Grangeon, GREMI, CNRS-Universite d'Orleans, France, S. Aachboun, STMicroelectronics, Tours, P. Lefaucheux, P. Ranson, GREMI, CNRS-Universite d'Orleans, France |
| 4:20pm | PS-ThA8 Investigation of Plasma Etching of SiO@sub 2@ Contact Holes using a Statistical Method and a Theoretical Profile Evolution Model@footnote 1@ C. Liu, B. Abraham-Shrauner, Washington University |