IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Plasma Science Thursday Sessions
       Session PS-ThA

Paper PS-ThA4
Ions in Holes - Experimental Measurements of Ion Trajectories Inside Surface Features on rf-biased Wafers

Thursday, November 1, 2001, 3:00 pm, Room 104

Session: Feature Profile Evolution
Presenter: J.R. Woodworth, Sandia National Laboratories
Authors: J.R. Woodworth, Sandia National Laboratories
I.C. Abraham, Intel Corporation
P.A. Miller, Sandia National Laboratories
R.J. Shul, Sandia National Laboratories
B.P. Aragon, Sandia National Laboratories
T.W. Hamilton, Sandia National Laboratories
C.G. Willison, Sandia National Laboratories
Correspondent: Click to Email
Most microelectronic devices go though one or more stages in a plasma etching discharge in which energetic ions and radicals are used to etch deep holes or lines in the parts being fabricated. Recent computer models coupled with experimental measurements have greatly improved understanding of the bulk plasmas in these etching discharges. Comparatively little is known for certain however, about interactions between the plasma and the wafer material inside the actual features being etched. This lack of knowledge stems primarily from the absence of experimental data on plasma parameters inside the small surface features. In this talk, we will report direct measurements of ion fluxes, energy distributions, and angular distributions as a function of position at the bottom of small holes in wafers as well as near straight walls and in corners of larger wafer features. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy under Contract DE-AC04-94AL85000.