IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Plasma Science Friday Sessions

Session PS-FrM
Diagnostics III

Friday, November 2, 2001, 8:20 am, Room 104
Moderator: M.C.M. van de Sanden, Eindhoven University of Technology, The Netherlands


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Click a paper to see the details. Presenters are shown in bold type.

8:20am PS-FrM1 Invited Paper
Optical Diagnostics of Charged Particles in Processing Plasmas
A. Kono, Nagoya University, Japan
9:00am PS-FrM3
Measurements of the Spatiotemporal Variation of Ion Flux in Plasma Etching Reactors
T.-W. Kim, S.J. Ullal, E.S. Aydil, University of California, Santa Barbara
9:20am PS-FrM4
Time-resolved Radical Measurements in a Remote Silane Plasma Using the Cavity Ringdown Absorption Technique
J.P.M. Hoefnagels, A.E.E. Stevens, W.M.M. Kessels, D.C. Schram, M.C.M. van de Sanden, Eindhoven University of Technology, The Netherlands
9:40am PS-FrM5
Temporally Resolved Measurement of Electron Temperature, Relative Electron Density, and Atomic Fluorine Density during Fluorocarbon/Rare-gas Plasma Etching of SiO@sub 2@, using Optical Emission Spectroscopy
M.J. Schabel, Bell Laboratories, Lucent Technologies, V.M. Donnelly, W.W. Tai, A. Kornblit, Agere Systems
10:00am PS-FrM6
Characterization of Mass-Filtered CF@sub x@@super +@ Ion Beams for Surface Studies of Etching
M.J. Gordon, K.P. Giapis, California Institute of Technology
10:20am PS-FrM7
Ion Energy Measurements in a Pulsed Plasma with a High-resolution, Submicron, Retarding Field Analyzer
M.G. Blain, M.J. Sowa, R.L. Jarecki, Sandia National Laboratories
11:00am PS-FrM9
Characteristics of the LAPPS Ion Flux to an RF Biased Surface
D.D. Blackwell, S.G. Walton, D. Leonhardt, D.P. Murphy, R.F. Fernsler, R.A. Meger, US Naval Research Laboratory