Click a paper to see the details. Presenters are shown in bold type.
| 9:40am | MI+EL-MoM1 Invited Paper High Speed 256k Magnetoresistive RAM S. Tehrani, Motorola Corporate |
| 10:20am | MI+EL-MoM3 Dry Etching of MRAM Device Structures R.A. Ditizio, G. Beique, Tegal Corporation |
| 10:40am | MI+EL-MoM4 Invited Paper Spin Dependent Tunneling Devices for Nonvolatile Latch Memory M. Tondra, D. Wang, D.J. Brownell, Z. Qian, C. Nordman, J. Daughton, NVE Corp. |
| 11:20am | MI+EL-MoM6 Effects of Interfacial Electronic States and Roughness on Tunnel Magnetoresistance J. Inoue, H. Itoh, Nagoya University, Japan |
| 11:40am | MI+EL-MoM7 Performance of the BARC Magnetoresistive Sensor* J.C. Rife, R.J. Colton, M. Miller, Naval Research Laboratory, M.A. Piani, Nova Research, Inc., C.R. Tamanaha, Geo-Centers, Inc., P.E. Sheehan, L.J. Whitman, Naval Research Laboratory |