| IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11) | |
| Dielectrics | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | DI-MoA1 Invited Paper Epitaxial High-K Gate Oxides on Silicon: Impact on Future CMOS Z. Yu, R. Droopad, J. Ramdani, J. Curless, C. Overgaard, J. Finder, K. Eisenbeiser, J. Wang, W. Ooms, Motorola Labs, Y. Liang, S.A. Chambers, Pacific Northwest National Laboratory |
| 2:40pm | DI-MoA3 High Dielectric Constant Material as an Alternative Gate Dielectric in MOSCAP and MOSFET Applications Y.S. Lin, J.P. Chang, University of California, Los Angeles |
| 3:00pm | DI-MoA4 High Frequency Characterization of Thin Films with High Dielectric Constant J. Westlinder, K. Larsson, H.-O. Blom, J. Olsson, Uppsala University, Sweden |
| 3:40pm | DI-MoA6 Interfacial Stability of High-k Dielectrics Deposited by Atomic Layer Chemical Vapor Deposition W. Tsai, IMEC (Intel assignee), Belgium, H. Nohira, R. Carter, M. Caymax, T. Conard, S. De Gendt, M.M. Heyns, J. Petry, O. Richard, W. Vandervorst, E. Young, C. Zhao, IMEC, Belgium, J. Maes, M. Tuominen, ASM Europe, The Netherlands |
| 4:00pm | DI-MoA7 First Step Towards Crystalline Titanate-Si Integration: Formation of Atomic Layer Strontium Silicate on Si(001) S. Gan, Y. Liang, S. Shutthanandan, S. Thevuthasan, Pacific Northwest National Laboratory |
| 4:20pm | DI-MoA8 High-k Metal Oxide Dielectrics Deposited by CVD using Oxygen and Ozone M. Yoon, V.K. Medvedev, K.D. Hauch, University of Washington, J.W. Rogers, Jr., Pacific Northwest National Laboratory, Y. Ono, S.T. Hsu, Sharp Laboratories of America |