IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Plasma Science Monday Sessions
       Session PS2-MoM

Paper PS2-MoM2
Peak Wafer Temperature Measurements during Dielectric Etching in a MERIE Etcher

Monday, October 29, 2001, 10:00 am, Room 104

Session: Diagnostics I
Presenter: C.T. Gabriel, Advanced Micro Devices
Correspondent: Click to Email
Using disposable instrumented SensArray APTI wafers, peak wafer temperatures were measured during plasma processing in a MERIE dielectric etch tool. An inorganic low-k dielectric etch process was studied, and many parameters were varied to determine their effect on wafer temperature. Wafer temperature rose rapidly when the plasma was turned on, approaching a stable temperature after about 30 sec. When the lower electrode temperature setpoint or the RF power setting was increased, wafer temperature increased linearly. Peak wafer decreased as backside He cooling pressure was increased. The dual-zone electrostatic chuck allows separate control of center and edge He pressure. These pressures were varied individually or together. Temperature measurements indicated that the zones give reasonably independent control of center and edge wafer temperature. The importance of monitoring and controlling wafer temperature during dielectric etching is also discussed.