IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Plasma Science Tuesday Sessions
       Session PS2+TF+SE-TuA

Paper PS2+TF+SE-TuA9
A New and Fast In-situ Spectroscopic Infrared Absorption Measurement Technique for Submonolayer Detection at High Growth Rate

Tuesday, October 30, 2001, 4:40 pm, Room 104

Session: PECVD/IPVD
Presenter: M.F.A.M. van Hest, Eindhoven University of Technology, The Netherlands
Authors: M.F.A.M. van Hest, Eindhoven University of Technology, The Netherlands
A. Klaver, Eindhoven University of Technology, The Netherlands
M.C.M. van de Sanden, Eindhoven University of Technology, The Netherlands
Correspondent: Click to Email
Silicon oxide like films are deposited at high rate (up to 200 nm/s) using an expanding thermal plasma (Cascaded arc) in combination with hexamethyldisiloxane (HMDSO) and oxygen as deposition precursors. In general Fourier transform infrared (FTIR) reflection spectroscopy is a useful tool for in situ analysis of the film deposition growth process. However this technique is difficult to apply when the film deposition rate is reaching high values (10 to 100 nm/s). When studying submonolayer growth, the time resolution of a FTIR setup is too long (typical 0.1 - 1 s). So another technique has to be used to improve the time resolution. The heart of the new technique is a grating mounted on a laser scanner, which oscillates at a frequency of up to 300 Hz. Only a small part of the infrared spectrum will reach the detector (MCT). The rotation angle is limited and therefore the spectral bandwidth with respect to a FTIR spectroscope is small (200 cm@super -1@ at 1000 cm@super -1@), but the time resolution improved (1.7 to 10 ms). A cascaded arc is used as a light source, because if its high radiation temperature it produces more infrared light than a glowbar. To make submonolayer absorption detectable, single reflection is not sufficient; therefore attenuated total reflection (ATR) crystals are used as substrates. These crystals make multiple (50) interactions of the infrared beam with the depositing film possible, leading to a higher measured absorption. The set up will be presented in detail as well as the first results of the in situ study of the film growth of silicon oxide like films. Together with the in situ study also a plasma post treatment study has been performed. With this the resistance of the deposited films towards an argon/oxygen plasma has been studied. This study shows that the deposited films contain a significant amount of carbon, which can be removed by post treatment.