For a well-controlled dielectric etching with 0.18-0.13µm capability, a considerable amount of molecular species, CF@sub 2@, has been needed in conjunction with an intentionally suppressed fluorine, F, in (C@sub 4@F@sub 8@/C@sub x@F@sub y@+Ar) plasma, and, at the same time, having a sufficient ion-flux. Multi-dissociative collision phenomenon and multiple gas fragmentation should be avoided in gas phase for this purpose. For designing such plasma, chamber geometry, and processes, further evolution seems to be necessary. In this paper, a highly selective contact etching against the photo-resist mask over the whole wafer, and a relatively high oxide etch rate with good reproducibility are discussed in terms of a new planer-type, high-medium density plasma, having a doubled-near-surface structure, and experimenting with a noble processing with a computationally feed-forwarded architecture.