IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Plasma Science Monday Sessions
       Session PS1-MoA

Paper PS1-MoA3
The Deposition on and Etching of Si(100) by Large, Hyperthermal Fluorocarbon Ions

Monday, October 29, 2001, 2:40 pm, Room 103

Session: Plasma-Surface Interactions I
Presenter: E.R. Fuoco, University of Illinois at Chicago
Authors: L. Hanley, University of Illinois at Chicago
E.R. Fuoco, University of Illinois at Chicago
M.B.J. Wijesundara, University of Illinois at Chicago
Correspondent: Click to Email
Fluorocarbon plasmas are commonly used to etch features into Si wafers for the production of microelectronic circuits. It has been postulated that large fluorocarbon ions participate in both etching the Si and deposition of a fluorocarbon thin film on Si that hinders etching.@footnote 1@ We study the ability of mass-selected beams of large, hyperthermal fluorocarbon ions to deposit films on and etch Si(100). 25 to 200 eV C@sub2@F@sub4@@super+@ and C@sub3@F@sub5@@super+@ ions are deposited H-Si(100) and x-ray photoelectron spectroscopy is used to analyze the resultant fluorocarbon films. The disappearance of the Si(2p) peak in the survey spectra indicates that lower energy C@sub3@F@sub5@@super+@ ions create a continuous, relatively thick film as ion fluence is increased. On the contrary, higher energy C@sub3@F@sub5@@super+@ ions create a film that is self-limiting. As the ion fluence is increased, the film thickness stays constant. The C(1s) core level spectra contain the same fluorinated carbon components at all energies. A comparison of two different ions, C@sub2@F@sub4@@super+@ versus C@sub3@F@sub5@@super+@, show close similarities in the C(1s) core level spectra leading to the conclusion that the identity of the ion does not significantly change the chemical composition of the deposition. Atomic force microscopy is also employed to view the morphology change of the different energy deposits. These results are discussed in terms of the role of large fluorocarbon ions in the plasma etching of Si(100). @footnote 1@M.B.J. Wijesundara, Y. Ji, B. Ni, S.B. Sinnott, L. Hanley, J. Appl. Phys. 88 (2000) 5004 and references therein.