IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Plasma Science Monday Sessions
       Session PS1-MoA

Paper PS1-MoA2
In-vacuo Electron-Spin-Resonce Study on Fluorocarbon Films for SiO@sub 2@ Plasma Etching

Monday, October 29, 2001, 2:20 pm, Room 103

Session: Plasma-Surface Interactions I
Presenter: K. Ishikawa, Association of Super-Advanced Electronics Technologies (ASET), Japan
Authors: K. Ishikawa, Association of Super-Advanced Electronics Technologies (ASET), Japan
S. Hayashi, Association of Super-Advanced Electronics Technologies (ASET), Japan
M. Okigawa, Association of Super-Advanced Electronics Technologies (ASET), Japan
S. Kobayashi, Association of Super-Advanced Electronics Technologies (ASET), Japan
M. Sekine, Association of Super-Advanced Electronics Technologies (ASET), Japan
M. Nakamura, Association of Super-Advanced Electronics Technologies (ASET), Japan
S. Yamasaki, Joint Research Center of Atom Technology (JRCAT), Japan
T. Yasuda, Joint Research Center of Atom Technology (JRCAT), Japan
J. Isoya, Joint Research Center of Atom Technology (JRCAT), Japan
Correspondent: Click to Email
An in-vacuo electron spin resonance (ESR) setup opens the new experimental approach to the understanding the microscopic chemical reactions in etching process. Creation of dangling bonds (DB), namely, bond breaking, is indeed a key process for etching mechanism and created DB are playing an important role for surface reactions. The in-vacuo ESR technique is applied to the studies of surface, on which fluorinated carbon (a-C:F) film exists, during fluorocarbon gas etching processes of an amorphous SiO@sub 2@ film. In this work, we prepared a capacitively-driven reactor which is connected with an ESR system through a wafer transfer system. An a-C:F film was deposited on a crystalline Si substrate with 20 nm thickness which is estimated using cross-sectional transmission electron microscopy. The carbon DB signal in a-C:F film was observed after transferring to the ESR cavity under vacuum ambient. This signal are stable as long as the sample is kept in vacuum, however, once the sample was exposed to air, the signal intensity drastically decreased. The decrease of ESR intensity by air exposure points out that the oxygen molecules penetrate deeply into the a-C:F film, and terminate spin centers in the film. This technique can be applied to the reaction of a-C:F films with oxygen atoms with a bottom layer of SiO@sub 2@ films for the case of SiO@sub 2@ etching processes, the selectice etching mechanisms. @FootnoteText@ This work was supported by NEDO.