IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
Plasma Science
Wednesday Sessions
Session PS-WeA
Invited Paper PS-WeA6
Plasma Deposition of Silicon Thin Films: Atomic-Scale Modeling of Radical-Surface Interactions
Wednesday, October 31, 2001, 3:40 pm, Room 104
Session:
Plasma Surface Interactions II
Presenter:
D. Maroudas,
University of California, Santa Barbara
Correspondent:
Click to Email
Hydrogenated amorphous silicon (a-Si:H) thin films grown by plasma-assisted deposition from silane-containing discharges are used widely in technological applications. A fundamental understanding of the interactions of radicals, such as SiHx (0