IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Plasma Science Tuesday Sessions
       Session PS-TuP

Paper PS-TuP8
Diagnostics and Modelling of Ar/O@sub 2@ Plasma used for Plasma Oxidation of Al

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Plasma Deposition, Modeling, and Emerging Applications Poster Session
Presenter: S. Novak, J. E. Purkyne University, Czech Republic
Authors: J. Pavlik, J. E. Purkyne University, Czech Republic
S. Novak, J. E. Purkyne University, Czech Republic
Z. Stryhal, J. E. Purkyne University, Czech Republic
R. Hrach, Charles University, Czech Republic
V. Hrachova, Charles University, Czech Republic
M. Vicher, Charles University, Czech Republic
Correspondent: Click to Email
Plasma oxidation, utilising highly activated particles in oxygen or oxygen/argon plasma, is one of the low temperature techniques used to growth of dielectric films on metal and semiconductor surfaces. The contribution deals with a comparative study of plasma characteristics and thin oxide film properties with following tasks: to better understand the mechanism of plasma oxidation of aluminium thin films, to find basic factors which play a dominant role in the process studied, and to find factors which determine properties of the created oxide layers. The experiments were carried out in a system for plasma-chemical surface modification of thin films. A DC discharge was applied in an oxygen-argon mixture. The main diagnostic techniques applied in order to determine plasma parameters were the optical emission spectroscopy and the quadrupole mass spectrometry. Both the composition and the atomic surface density of prepared samples were studied by conventional Rutherford elastic back-scattering. Investigation of morphology of the sample surfaces and surface roughness of the alumina thin film were performed by Atomic Force Microscopy. The experimental techniques are combined with computer experiment in order to achieve better insight into the problem solved. The computer experiment consists of several stages - model of gaseous plasma chemistry, model of the plasma-solid interaction, and model of processes on the surface of growing oxide film. The technique used was both the macroscopic kinetic approach and combination of various simulation methods - fluid modelling and PIC-MC modelling.