IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Plasma Science Tuesday Sessions
       Session PS-TuP

Paper PS-TuP4
Evaluation and Measurement of Ionization Fraction in Ionized Physical Vapor Deposition using Parallel-plates Method

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Plasma Deposition, Modeling, and Emerging Applications Poster Session
Presenter: K.-F. Chiu, National Tsing Hua University, Taiwan
Authors: K.-F. Chiu, National Tsing Hua University, Taiwan
Z.H. Barber, University of Cambridge, UK
R.E. Somekh, Plasmon Data Systems Ltd., UK
Correspondent: Click to Email
The ionization fraction of the depositing flux of the ionized physical vapor deposition (IPVD) process was measured using a parallel-plates method. The method uses two parallel stainless steel plates forming a 1~2 mm slot, and measures the ionization fraction of the depositing flux travelling through the slot. A simple one-directional electric field was applied by biasing one side of the plates with the other side earthed. Negative bias was applied to avoid serious purperbation of the plasma. Since the ionized atoms are attractive to the biased side, the ionization fraction can be obtained by comparing the deposition rates with and without bias. This method was evaluated by modelling the trajectories of the depositing ions under the influence of the applied electric field.