IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Plasma Science Tuesday Sessions
       Session PS-TuP

Paper PS-TuP29
The Relationship between Plasma States and Film Formation Behavior in Ti-Me-N by Double Magnetron Sputtering

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Plasma Deposition, Modeling, and Emerging Applications Poster Session
Presenter: Y.M. Kim, Sungkyunkwan University, Korea
Authors: Y.M. Kim, Sungkyunkwan University, Korea
J. Kim, Sungkyunkwan University, Korea
J.G. Han, Sungkyunkwan University, Korea
Correspondent: Click to Email
The main problems related to a DC reactive sputtering are instability process and low deposition rate. In recent years, in order to overcome these disadvantages, pulsed reactive unbalanced or dual magnetron sputtering is widely used for thin film deposition, such as insulating nitrides and oxides films. In general, for analysis of the influence of plasma parameters on physical properties of thin films, plasma diagnostics have been widely used. In previous works, Ti-N was deposited by unbalanced magnetron sputtering. We have measured plasma parameters during deposition of Ti-N by Langmuir probe and Optical Emission Spectroscopy (OES). As increasing discharge power, plasma density and electron temperature were increased the other side, plasma potential was decreased. In this study, we have developed the mid-frequency powered double magnetron sputtering system with two different material targets. We synthesized Ti-Me-N films with various doped metal contents in this system and analyzed microstructures of the sample with XRD and SEM. Also, for feedback control and analysis of the influence of plasma parameters, we have studied the relationship between plasma states and film formation behavior for double magnetron discharge conditions by Langmuir probe and OES.