IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Plasma Science Tuesday Sessions
       Session PS-TuP

Paper PS-TuP11
Study of Pulsed Plasma Doping by Experimental Diagnostics and HPEM Simulations

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Plasma Deposition, Modeling, and Emerging Applications Poster Session
Presenter: Y. Lei, University of Texas at Dallas
Authors: Y. Lei, University of Texas at Dallas
E.A. Oakes, University of Texas at Dallas
M. Goeckner, University of Texas at Dallas
S.B. Felch, Varian Semiconductor Equipment Associates
Z. Fang, Varian Semiconductor Equipment Associates
B.-W. Koo, Varian Semiconductor Equipment Associates
Correspondent: Click to Email
Pulsed plasma doping is a potential solution to implement ultra-shallow junctions. Previous studies of the pulsed plasma doping process have closely examined the implanted species@footnote 1@ and device characteristics.@footnote 2@ In this paper we examine fundamental issues related to the plasma source used in that process. The work reported here combines both experimental and theoretical studies. Experimental work consists primarily of Langmuir probe studies of the discharge. Early data indicate that during a 20 µs long implant pulse the plasma density is on the order of 10@super 9@ cm@super -3@ and the electron temperature is ~2 eV. Between pulses, the density falls to 10@super 6@ cm@super -3@ and the electron temperature collapses to ~0.2 eV. We combine the experimental work with simulations using the Hybrid Plasma Equipment Model, HPEM.@footnote 3@ Comparisons will be made between the simulation and the experimental results. Finally, we will discuss likely electron heating mechanisms in this discharge. @FootnoteText@ @footnote 1@M.J. Goeckner, S.B. Felch, Z. Fang, et al. "Plasma doping for shallow junctions," J VAC SCI TECHNOL B 17: (5) 2290-2293 SEP-OCT 1999 @footnote 2@ D. Lenoble, M.J. Goeckner, S.B. Felch, Z. Fang, J. Galvier and A. Grouillet, "Evaluation of Plasma Doping for sub-0.18 µm Devices" Proceedings of the 12th International Conference on Ion implantation Technology ’98, Kyoto, Jp, June 22-26, 1998. @footnote 3@ R. Kinder and M. J. Kushner, "Wave Propagation and Power Deposition in Magnetically Enhanced Inductively Coupled and Helicon Plasma Sources", J. Vac. Sci. Technol. A 19, 76 (2001). The authors from UTD gratefully acknowledge M.J. Kushner for allowing us to use HPEM in this study. This work is supported by Varian Semiconductor Equipment Associates.