IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Plasma Science Thursday Sessions
       Session PS-ThP

Paper PS-ThP9
High Performance SiO@sub 2@ Etching using C@sub 4@F@sub8@ and C@sub 5@F@sub8@

Thursday, November 1, 2001, 5:30 pm, Room 134/135

Session: Plasma Etching Poster Session
Presenter: S.H. Rha, Advanced Technology Line, Korea
Authors: S.H. Rha, Advanced Technology Line, Korea
D. You, Advanced Technology Line, Korea
C.W. Lee, Advanced Technology Line, Korea
J.Y. Choi, Advanced Technology Line, Korea
Correspondent: Click to Email
SiO@sub 2@ etching characteristics of C@sub 4@F@sub 8@ and C@sub 5@F@sub 8@ were comparatively studied. The 2MHz rf-biased electrostatic chuck in13.56MHz high-density transformer coupled plasma (TCP) reactor was used. The typical operating conditions is 10-15 mTorr, 300-400 sccm(total flow rate), 2500W Source power and 1800W rf-bias power. C@sub 4@F@sub 8@ and C@sub 5@F@sub 8@ were employed as source gases to investigate their differences in etching performance and selectivity on both SiO@sub 2@ and PR. For increasing the SiO@sub 2@/PR Selectivity. The CH@sub 2@F@sub 2@ was used. And the optimum CH@sub 2@F@sub 2@ mixing ratio for SiO2 etching is reported that. Based on these results, in sub-micron contact hole(0.1-1µm) etching, we achieved SiO@sub 2@ etch rate is more than 6000A and SiO@sub 2@/PR selectivity is 5:1.