IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Plasma Science Thursday Sessions
       Session PS-ThP

Paper PS-ThP5
Development of Self-aligned Contact Technology on a Capacitively Coupled System

Thursday, November 1, 2001, 5:30 pm, Room 134/135

Session: Plasma Etching Poster Session
Presenter: T. Chien, Lam Research Corporation
Authors: T. Chien, Lam Research Corporation
C. Nelson, Lam Research Corporation
D. Keil, Lam Research Corporation
E.A. Hudson, Lam Research Corporation
K. Makhratechev, Lam Research Corporation
Correspondent: Click to Email
Self-aligned contact (SAC) technology was developed to enable efficient reduction of active areas of an integrated circuit. However, implementation of SAC etch and process integration has been very challenging. Many factors are known to influence SAC etch performance. This work addresses the effects of the machine factors (pressure, gas flow/ratio, temperature, RF powers, other gas addition, etc.) and different fluorocarbon gases in a capacitively coupled plasma etch system. Results from several designed experiments (DOE's) will be present which explore main effects and interactions for several key variables affecting SAC etch. Trends identified include critical dependencies of etch results on power and gas flow. To better understand the mechanisms responsible for the trends observed, UV absorption spectroscopy and Langmuir probe measurements were also implemented for each DOE condition. Correlations observed between these measurements and etch trends will be discussed.