IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Plasma Science Thursday Sessions
       Session PS-ThP

Paper PS-ThP4
Investigation of Nitride Morphology after Self-Aligned Contact Etch

Thursday, November 1, 2001, 5:30 pm, Room 134/135

Session: Plasma Etching Poster Session
Presenter: D. Keil, Lam Research Corporation
Authors: D. Keil, Lam Research Corporation
J.W. Shon, Lam Research Corporation
B.A. Helmer, Lam Research Corporation
T. Chien, Lam Research Corporation
P. Gopaladasu, Lam Research Corporation
J. Kim, Samsung Corporation
H. Hwang, NASA Ames Research Center
Correspondent: Click to Email
Self-Aligned Contact (SAC) etch has emerged as a key enabling technology for the fabrication of very large-scale memory devices. However, this is also a very challenging technology to implement from an etch viewpoint. The issues that arise range from poor oxide etch selectivity to nitride to problems with post etch nitride surface morphology. Unfortunately, the mechanisms that drive nitride loss and surface behavior remain poorly understood. Using a simple langumuir site balance model, SAC nitride etch simulations have been performed and compared to actual etched results. This approach permits the study of various etch mechanisms that may play a role in determining nitride loss and surface morphology. Particle trajectories and fluxes are computed using Monte-Carlo techniques and initial data obtained from double Langmuir probe measurements. Etched surface advancement is implemented using a shock tracking algorithm. Sticking coefficients and etch yields are adjusted to obtain the best agreement between actual etched results and simulated profiles.