IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Plasma Science Thursday Sessions
       Session PS-ThP

Paper PS-ThP37
0.1µm Line and Space Nitride Hard Mask Open Process Using Ar/C@sub 2@F@sub 6@/O@sub 2@ Plasma

Thursday, November 1, 2001, 5:30 pm, Room 134/135

Session: Plasma Etching Poster Session
Presenter: J.W. Shon, Lam Research Corporation
Authors: W.S. Lee, Samsung Electronics
J.W. Shon, Lam Research Corporation
B.K. Kong, Lam Research Corporation
E.A. Hudson, Lam Research Corporation
Correspondent: Click to Email
Traditional line and space nitride hard mask open process uses Ar/CF4/CHF3/O2 recipes. The process chemistry using both CF4 and CHF3 combination provides excellent CD control with controllable amount of polymer needed for 0.14 micron and larger devices. However, as the feature size shrinks to 0.1 micron, better PR selectivity and CD control are required. Using C2F6 based recipe, we can double PR selectivity with minimum penalty in CD blow out. We have developed C2F6 based nitride hard mask open recipe in comparison to the baseline CF4 recipe. PR selectivity and profile are much better compared to CF4 based recipes. We are reporting process trends for C2F6 based line and space nitride hard mask open process with respect to total power, power ratio, effects of adding polymerizing gas, and striation issues.