IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Plasma Science Thursday Sessions
       Session PS-ThP

Paper PS-ThP36
Low Temperature Etch Characteristics Using 193 nm ArF Photoresist Below 0.1µm Device

Thursday, November 1, 2001, 5:30 pm, Room 134/135

Session: Plasma Etching Poster Session
Presenter: W.S. Lee, Samsung Electronics, South Korea
Authors: W.S. Lee, Samsung Electronics, South Korea
J.W. Shon, Lam Research Corporation
B.K. Kong, Lam Research Corporation
J. Kim, Samsung Electronics, South Korea
E.S. Chae, Samsung Electronics, South Korea
Correspondent: Click to Email
Patterning sub 0.1 micron devices require a photoresist (PR) that is extremely photosensitive to short wavelength such as 193 nm ArF PR. However, etch problems associated with ArF PR includes higher etch rate, less selectivity, less PR thickness due to increasing opacity at shorter wavelength. For a nitride hard mask etching, process results are sensitive to process temperature. SEM pictures obtained from hard mask open process show notable improvements at -20°C. Wafer temperature measurements suggest that bulk wafer temperature is only about 10°C higher that chiller temperature. However, surface of PR could heat up to much higher than that of bulk wafer temperature, which could cause PR deformation.