IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Plasma Science Thursday Sessions
       Session PS-ThP

Paper PS-ThP32
Trimming Photoresist in a DPS(TM)II 300mm Poly Etch System - Control of Trimming Rate, Uniformity and Stability

Thursday, November 1, 2001, 5:30 pm, Room 134/135

Session: Plasma Etching Poster Session
Presenter: M. Shen, Applied Materials
Authors: M. Shen, Applied Materials
O. Yauw, Applied Materials
N. Gani, Applied Materials
C. Lin, Applied Materials
Y. Lai, Applied Materials
M. Chu, Applied Materials
Correspondent: Click to Email
As the IC industry aggressively moving towards 0.10um gate length devices, requirements on CD control become increasingly difficulty to meet. Resolving 0.10um line width with great accuracy and uniformity on 300mm wafer is a major challenger for conventional photolithography technology. Therefore, trimming photoresist through etching has become a very attractive alternative to speed up the road map towards 0.10um technology using existing photolithography. Resist trimming, however, requires strict control of trimming rate, uniformity and stability. Trimming linearity is another important element for precise CD control. With integrated CD metrology approach, it is possible to adjust the trimming time based on in-coming wafer to obtain desired final CD for each wafer. The study presented here outlines some of the development works for resist trimming process on Applied Materials DSP(TM)II 300mm poly etcher system. Trimming up to 30nm with less than 5nm in range uniformity has been achieved on 300mm wafers. Excellent CD uniformity controls on overall process involving trimming, hardmask and polysilicon gate were demonstrated on DPS(TM)II 300 system.