IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Plasma Science Thursday Sessions
       Session PS-ThP

Paper PS-ThP28
Effect of Ion Bombardment on Developed Photoresist Morphology during Reactive Etch Processes for sub 0.25 micron Semiconductor Devices

Thursday, November 1, 2001, 5:30 pm, Room 134/135

Session: Plasma Etching Poster Session
Presenter: M. Naeem, IBM Microelectronics Division
Authors: M. Naeem, IBM Microelectronics Division
R. Wise, IBM Microelectronics Division
F. Wang, Cypress Semiconductors
G. Worth, IBM Microelectronics Division
D. Dobuzinsky, IBM Microelectronics Division
Z. Lu, Infineon Technologies
A. Hadi, Conexant
Correspondent: Click to Email
The use of advanced resist systems has become necessary for lithography in processing of advanced (sub 0.25 µm) semiconductor devices to achieve acceptable image quality. These novel resist systems are more sensitive to both post exposure treatments as well as the ion bombardment component present in reactive ion etch (RIE) processes. We discuss the impact of resist interactions with low energy plasma and morphological changes in the resist profile. In particular, the effects of different photoresist constituents, post develop bake conditions, various RIE steps and RIE parameters in capacitively coupled plasma (CCP), magnetically enhanced RIE (MERIE) and inductively coupled plasma (ICP) systems on resist morphology and the quality of final etched images are presented.