IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Plasma Science Thursday Sessions
       Session PS-ThP

Paper PS-ThP13
Challenges in 0.1µm Line and Space Nitride Hard Mask Etching

Thursday, November 1, 2001, 5:30 pm, Room 134/135

Session: Plasma Etching Poster Session
Presenter: Y.S. Chae, Samsung Semiconductor R&D Center, Korea
Authors: Y.S. Chae, Samsung Semiconductor R&D Center, Korea
J. Kim, Samsung Semiconductor R&D Center, Korea
W.M. Ahn, Lam Research Corporation
J.W. Shon, Lam Research Corporation
W.S. Lee, Samsung Semiconductor R&D Center, Korea
I.S. Kim, Samsung Semiconductor R&D Center, Korea
Y. Kang, Samsung Semiconductor R&D Center, Korea
J.P. Lee, Lam Research Corporation
B.K. Kong, Lam Research Corporation
C.J. Kang, Samsung Semiconductor R&D Center, Korea
J.T Moon, Samsung Semiconductor R&D Center, Korea
Correspondent: Click to Email
As device feature size shrinks near 0.1 micron, PR (Photo Resist) erosion, microloading and striation are all much more serious due to 3D effect. And the thickness of nitride hard mask also becomes higher to prevent the electric short between gate and contact during SAC (Self Aligned Contact) process. These lead to require PR selectivity higher up to 4. Since the vertical metal-etch traditionally produces positive CD (Critical Dimension) bias, the nitride hard mask etching needs to produce negative CD bias. Therefore, we need to etch PR with high selectivity and negative CD bias, which is in trade-off relations. We have characterized the process trends in CD bias, striation and PR selectivity of nitride hard mask etching in terms of additive chemistry, RF power and its ratio. Best process results show narrow process window for relatively lower power with narrow range of O2 flow. Successful results for 0.09 micron process are obtained for lower ion energy process with high Ar flow.