IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Plasma Science Monday Sessions
       Session PS-MoP

Paper PS-MoP6
Synthesis and Characterization of New Material (BON) for Semiconductor Applications

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: Plasma Diagnostics and Plasma-Surface Interactions Poster Session
Presenter: J.-H. Boo, Sungkyunkwan University, Korea
Authors: G.C. Chen, Sungkyunkwan University, Korea
S.-B. Lee, Sungkyunkwan University, Korea
J.-H. Boo, Sungkyunkwan University, Korea
Correspondent: Click to Email
Recently, oxynitride compounds sparked among functional materials, such as Ti(ON), Si(ON) and SiBON. They presented a promising potential application of diffusion barrier, solar material and interlevel dielectric material. Since BON was declared as a by-product in synthesis of hard material, we have firstly developed the research on the molecular structure of new material (i. e. BON). In this study, we would like to report on the electrical property of BON thin films grown on Si(100) substrates by low frequency RF derived plasma assisted CVD. The effect of growth condition, such as flux of fed gas, deposition temperature as well as growth time, on the I-V characteristics are mainly discussed. The experimental results showed that the electrical resistance decreased with increasing the nitrogen flux and growth time. Amorphous BON thin film grown at relatively low temperature has more higher resistance than microcrystal containing thin film that obtained at high temperature, and the most smooth morphology was benefit of getting low resistance. By controlling nitrogen content in the film layer it can be possible to making the BON thin films that have either semiconducting or insulating properties. The as-grown new materials were characterized by XPS, RBS, FTIR, AFM, and TEM/TED. During CVD, moreover, the optical emission spectra (OES) were also measured in-situ for plasma diagnostics and analysing gas phase reaction. Based on the OES result, we confirmed that the formation of BON thin film was suit to be performed under nitrogen plasma.