IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Plasma Science Monday Sessions
       Session PS-MoP

Paper PS-MoP24
Endpoint Detector for Controlling Clean and Passivation in HDP-CVD Processes

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: Plasma Diagnostics and Plasma-Surface Interactions Poster Session
Presenter: R. Rulkens, Novellus Systems, Inc.
Correspondent: Click to Email
Optical Emission Spectroscopy was used to develop a sophisticated End Point Detector for the clean and passivation steps of HDP CVD processes. During the clean process steps, NF3 plasma removes build-up of SiO2 on the reactor walls. The end point detector in real time determines the optimal time at which the silica film is removed from the reactor walls and prevents over or under etching. After the clean steps, a Hydrogen plasma is used in the passivation step to remove residual fluorine. In a similar manner, the End Point Detector determines the optimal time needed for passivation. The diagnostics are incorporated into the equipment hard- and software and automatically control the correct timing of the clean and passivation steps.