IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Plasma Science Monday Sessions
       Session PS-MoP

Paper PS-MoP21
Novel In Situ Diagnostics for Plasma Processing of Advanced Materials

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: Plasma Diagnostics and Plasma-Surface Interactions Poster Session
Presenter: G. Zhang, University of Akron
Authors: E.A. Evans, University of Akron
G. Zhang, University of Akron
A. Salifu, Cree Research
Correspondent: Click to Email
Kinetic and transport parameters for nitride growth and processing are required for process design and optimization. A new approach for accurately determining these parameters at processing conditions will be presented. We have combined a large inductively coupled plasma reactor with a digital microbalance to make measurements of substrate weight during plasma processing of aluminum and aluminum nitride samples. The current set-up is capable of sensing growth and/or etch rates on the order of 1 microgram per second regardless of substrate area. We will present results that demonstrate the usefulness of these measurements for understanding the kinetic and transport mechanisms involved during plasma processing. These relationships are important not only for controlling oxidation during and after deposition but also for identifying growth regimes for high quality thin film nitride materials.