IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Dielectrics Monday Sessions
       Session DI2-MoP

Paper DI2-MoP8
The Effect of Hydrogen Plasma Treatment on Low-k Hybird-Organic-Siloxane-Polymer (HOSP) Against Damage During Photoresist Removal

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: Low K Dielectrics Poster Session
Presenter: P.T. Liu, National Nano Device Laboratory, Taiwan, R.O.C
Authors: T.C. Chang, National Sun Yat-Sen University, Taiwan, R.O.C.
Y.S. Mor, National Chiao Tung University,Taiwan, R.O.C.
P.T. Liu, National Nano Device Laboratory, Taiwan, R.O.C
T.M. Tsai, National Chiao Tung University, Taiwan, R.O.C.
C.W. Chen, National Chiao Tung University, Taiwan, R.O.C.
W.C. Gau, National Tsing Hua University, Taiwan, R.O.C.
S.M. Sze, National Chiao Tung University, Taiwan, R.O.C.
Correspondent: Click to Email
While critical dimensions continue to shrink into the deep submicron range for the need of ULSI circuit, the RC constant that governs both the parasitic delay time (i.e. the speed of operation) and corresponding power dissipation, becomes a dominant factor in improving the chip performance. An organic SOG, the Hybird-Organic-Siloxane-Polymer (HOSP) has high evaluation in ULSI applications because of the low dielectric constant about 2.5. It is also one suitable material of Methyl-Hybrido-Silsesquioxane (MHSQ) films, and simultaneously has good gap filling, low stress and comparable enough strength etc. Face with the same issues of organic low k materials, however, the quality of HOSP film is degraded after photoresist removing. This instability is one of the major problems in using HOSP as a low-k material. In this study, the HOSP film has been investigated for the intermetal dielectric application. In addition, H@sub 2@ plasma pre-treatment was applied to HOSP films. This treatment prevents HOSP films from O@sub 2@ plasma and chemical wet stripper damage during photoresist stripping processes. In the H@sub 2@ plasma treatment, hydrogen radicals can passivate the HOSP surface, preventing the formation of Si-OH bonds so that moisture uptake can be avoided. In addition, dielectric degradation due to photoresist stripping process can thereby solve by H@sub 2@ plasma treatment. These experimental results indicate that H@sub 2@ plasma treatment is a promising technique for integrating the HOSP as intermetal dielectric application.