IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Dielectrics Monday Sessions
       Session DI2-MoP

Paper DI2-MoP6
An Opportunity to Study the Outgassing Behavior of a Novel Organic Low K Material

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: Low K Dielectrics Poster Session
Presenter: J.F. Bernard, Advanced Micro Devices
Authors: J.F. Bernard, Advanced Micro Devices
S. Pangrle, Advanced Micro Devices
C. Gabriel, Advanced Micro Devices
Correspondent: Click to Email
Lowering interlayer dielectric(ILD) capacitance is key to enjoying the benefits of further advances in IC design and Cu interconnect technology. Conventional SiO2 is now being replaced as an ILD by an array of new materials. In some cases porosity is used to lower k, in others the films are actually novel organic materials. These new low k dielectrics can behave very differently from the SiO2 used in conventional IC fabrication to date. Outgassing is one metric that is a direct measure of film stability, curing, and contamination. Organic films especially can exhibit significant changes in outgassing vs. etch, cleaning and thermal budget. This complex outgassing of organics due to or during processing is a definite departure from SiO2, even for organo-precursor based glasses such as TEOS. We at AMD have had the opportunity to extensively study the outgassing behavior of DOW Chemical’s organic low k, SiLK, with both Dynamic and Isothermal Evolved Gas Analyses(EGA). Two distinct regimes of outgassing were observed. At lower temperature atmospheric contaminants are dominant. Benzene related film outgassing was observed above 450°C. XPS analyses confirmed the presence of aromatic binding. The stability of SiLK with respect to various processing steps was investigated with interesting results. These investigations led us to also take a look at our wafer storage materials. The affinity for the absorption of organics was demonstrated and minimized. The effects of processing on a porous derivative were examoned with an etch and clean matrix. Overall evolved gas analyses are proving to be a key data point in understanding and, ultimately, utilizing low k films in advanced IC fabrication.