IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Dielectrics Monday Sessions
       Session DI2-MoP

Paper DI2-MoP4
Process Characterization of Low Dielectric Constant Silicon Containing Fluorocarbon Films by Plasma Enhanced Chemical Vapor Deposition

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: Low K Dielectrics Poster Session
Presenter: Y.Y. Jin, Louisiana State University
Authors: Y.Y. Jin, Louisiana State University
H. Kim, Kyungpook National University, S. Korea
G.S. Lee, Louisiana State University
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The development of low dielectric constant (low-k) materials has become one of the most important key challenges for interlayer dielectrics (ILD) of the high performance ultra-large-scale-integration (ULSI) devices. As the decreased design rule and increased complexity of ULSI circuits have essentially increased the crosstalk and RC time delay caused by parasitic capacitance, a great deal of effort has been spent in reducing the dielectric constant of the interlayer as well as reducing the resistance of the wiring metals. Silicon containing fluorocarbon (SiCF) thin films for use as low dielectric ILD have been investigated. The SiCF films were deposited with plasma enhanced chemical vapor deposition (PECVD) using 5% disilane in helium (5%Si2H6/He) and carbon tetrafluoride (CF4) as the precursors. The properties of SiCF films effected by the total flow, the flow rate ratio of CF4/Si2H6 and annealing were investigated to obtain optimal deposition. This work presents the results of a process characterization of PECVD which are the deposition rate, the refractive index and the roughness as functions of the total flow and the flow ratio, and the shrinkage rate and the dielectric constant before/after annealing.