IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Dielectrics Wednesday Sessions
       Session DI-WeA

Invited Paper DI-WeA1
Materials Issues and Recent Development of Low k Dielectrics for Advanced Interconnects

Wednesday, October 31, 2001, 2:00 pm, Room 130

Session: Low K Dielectrics
Presenter: P.S. Ho, The University of Texas at Austin
Correspondent: Click to Email
Materials Issues and Recent Development of Low k Dielectrics for Advanced Interconnects Low k dielectrics are being developed for on-chip interconnects beyond the 0.13 micron generation. To replace silicon dioxide, there are stringent requirements on materials properties imposed on the low k dielectrics. The challenge is how to maintain the thermomechanical properties of the material while decreasing its dielectric constant, particularly for porous materials with dielectric constant less than 2. In spite of this difficulty, several materials have been developed and process integration demonstrated recently. The materials issues and characterization of low k dielectrics will be presented. Recent developments based on optimization of molecular structures will be discussed.