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    Dielectrics Tuesday Sessions
       Session DI-TuA

Paper DI-TuA9
Quadrupole Mass Spectrometer Studies of a High Temperature Etch Process

Tuesday, October 30, 2001, 4:40 pm, Room 130

Session: High K Dielectrics III
Presenter: St. Schneider, Forschungszentrum Juelich, Germany
Authors: St. Schneider, Forschungszentrum Juelich, Germany
H. Kohlstedt, Forschungszentrum Juelich, Germany
R. Waser, Forschungszentrum Juelich, Germany
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High temperature etch processes are necessary to pattern Platinum successfully. In contrast to conventional, low temperature sputter driven etch processes, a chemical etch component is observed. >From the process perspective, they yield in redeposition free features (no fences) and in good control over sidewall sloping (minimization of CD loss). Furthermore those process regimes are characterized by a good process stability in terms of wafer counts and particle contamination, which is due to the dominating volatile etch products. To systematically investigate possible reactive etch process regions, we used a reactive ion etching (RIBE) tool with a filament free ICP source, that gives us control over the beam energy and the current density, and allows to use reactive gases. In this study we present the results for a chlorine chemistry with oxygen and carbonmonoxide additives. An energy dispersive quadrupole mass spectrometer is used for in-situ process monitoring. In one configuration, we are able to place the probe in the wafer position, opposite to the ion beam source. In this way it is possible to investigate the beam properties which are normally impinging on the wafer surface. In a second position we are able to lock on the wafer from the side, to monitor the etch process. Though the main focus of the study is on Platinum we also present results from selectivity studies to different hard mask materials and substrate materials.