IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Dielectrics Tuesday Sessions
       Session DI-TuA

Paper DI-TuA6
In-situ, Real Time Studies of Interface Formation of BST Thin Films on Si Substrates

Tuesday, October 30, 2001, 3:40 pm, Room 130

Session: High K Dielectrics III
Presenter: A.H. Mueller, University of North Carolina, Chapel Hill
Authors: A.H. Mueller, University of North Carolina, Chapel Hill
N.A. Suvorova, University of North Carolina, Chapel Hill
E.A. Irene, University of North Carolina, Chapel Hill
O. Auciello, Argonne National Laboratory
J.A. Schultz, Ionwerks, Inc.
Correspondent: Click to Email
The decrease in feature size of electronic devices and the commensurate electronic properties scaling has resulted in a search for new materials to achieve the electronic properties required for such miniature technologies. Ba@sub 0.5@Sr@sub 0.5@TiO@sub 3@ (BST) and other oxide films have become the front-runners in a search for materials to replace existing dielectrics in future technologies. Precluding the integration of BST as a gate dielectric into silicon devices are issues regarding the interface quality between the dielectric and semiconductor as well as the metal contact, as these affect critical electrical properties of the film such as the magnitude of the dielectric constant and the leakage current. In-situ studies of the oxygen incorporation into these films and the interface formation between BST films and Si substrates using time of flight ion scattering and recoil spectrometry (ToF-ISARS) as well as spectroscopic ellipsometry (SE) are presently being employed to ascertain conditions which minimize interface intermixing and maximize oxygen incorporation during reactive ion beam sputter deposition, and these studies comprise the focus of this presentation. Ex-situ material and electronic characterizations have also been used to characterize devices (Ir/ BST/ Si) prepared completely in vacuo and have shown the film's overall dielectric constant to be reduced by an intermixed layer of BST and Si substrate possessing an intermediate dielectric constant, while leakage characteristics of the film indicate a dependence upon the degree of oxygen deficiency as well as the BST/ metal contact interface quality. The electronic characterization studies will be presented separately.@footnote 1@ @FootnoteText@ @footnote 1@ N.A. Suvorova, A.H. Mueller, E.A. Irene, O. Auciello, and J.A. Schultz. Electrical properties of BST thin films on Si substrates. Present Conference Proceedings.