AVS 47th International Symposium
    Thin Films Monday Sessions

Session TF-MoA
Atomic Layer Chemical Vapor Deposition II

Monday, October 2, 2000, 2:00 pm, Room 203
Moderator: S.M. Rossnagel, IBM T.J. Watson Research Center


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Click a paper to see the details. Presenters are shown in bold type.

2:00pm TF-MoA1
The Effect of Atomic Layer CVD Flow Parameters on the Growth Orientation of AlN Thin Films
J.N. Kidder, J.W. Rogers, T.P. Pearsall, University of Washington
2:20pm TF-MoA2
Atomic Layer Deposition (ALD) Films for Advanced Capacitors
O. Sneh, R.C. Phelps, T. Seidel, Genus, Inc.
2:40pm TF-MoA3 Invited Paper
Tungsten Atomic Layer Deposition: Nucleation and Growth on Oxide Surfaces
S.M. George, J.W. Klaus, J.W. Elam, C.E. Nelson, R.K. Grubbs, S.J. Ferro, University of Colorado
3:20pm TF-MoA5 Invited Paper
Radical Enhanced Atomic Layer Deposition (ALD) of Diffusion Barrier Films at Low Temperatures
A. Sherman, F. Turner, Sherman & Associates, C. Pan, ASM America, S.M. Rossnagel, IBM T.J. Watson Research Center
4:00pm TF-MoA7
Vacuum Beam Studies of Radical Enhanced Atomic Layer Chemical Vapor Deposition
F. Greer, D. Fraser, J.W. Coburn, D.B. Graves, University of California, Berkeley