AVS 47th International Symposium
    Thin Films Monday Sessions
       Session TF-MoA

Paper TF-MoA2
Atomic Layer Deposition (ALD) Films for Advanced Capacitors

Monday, October 2, 2000, 2:20 pm, Room 203

Session: Atomic Layer Chemical Vapor Deposition II
Presenter: O. Sneh, Genus, Inc.
Authors: O. Sneh, Genus, Inc.
R.C. Phelps, Genus, Inc.
T. Seidel, Genus, Inc.
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We will present new data on Atomic Layer Deposition (ALD) films. Films were deposited on our recently announced dielectric ALD processing module. Our ALD process equipment, now at beta phase, is a single wafer 200 mm process module that operates and fully integrates with Genus Lynx2 cluster tool. Data pertain for as deposited, fully stoichiometric Al@sub 2@O@sub 3@ and Ta@sub 2@O@sub 5@ films that are continuous and amorphous in the useful range of 15-200 Å, will be presented. CV and IV measurements indicate leakage current in the 10@super -8@ A/cm@super 2@ range for these films in the useful thickness range and dielectric constants of ~7.5 (Al@sub 2@O@sub 3@) and ~25 (Ta@sub 2@O@sub 5@). Step coverage over >15:1 aspect ratio structures with 100 nm width is 100 %. Supporting data will be presented and discussed. We will review data for dielectric films on silicon as well as over CVD and ALD deposited metal nitride thin films. Some aspects and applications of MIM and SIS capacitor technology development will be reviewed.