AVS 47th International Symposium
    Thin Films Monday Sessions
       Session TF-MoA

Paper TF-MoA7
Vacuum Beam Studies of Radical Enhanced Atomic Layer Chemical Vapor Deposition

Monday, October 2, 2000, 4:00 pm, Room 203

Session: Atomic Layer Chemical Vapor Deposition II
Presenter: F. Greer, University of California, Berkeley
Authors: F. Greer, University of California, Berkeley
D. Fraser, University of California, Berkeley
J.W. Coburn, University of California, Berkeley
D.B. Graves, University of California, Berkeley
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As device dimensions continue to shrink and aspect ratios continue to increase, it will become increasingly difficult to deposit highly conformal thin films for applications such as Cu diffusion barrier layers. Atomic Layer Chemical Vapor Deposition (ALCVD) has been proposed as one way to achieve these highly conformal thin films due to the layer-by-layer growth that is possible when a precursor and a stable reactive specie are introduced sequentially into a deposition chamber. One problem with conventional ALCVD is that the deposition temperatures that are required to achieve reasonable growth rates can be relatively high, and may be incompatible with the integration of these barrier films with temperature-sensitive films such as organic low-k materials.@footnote 1@ It has been recently proposed that by using a more reactive specie like a radical as the second reactant, atomic layer film deposition at lower temperatures may be possible.@footnote 2@ It may also be possible to find radical surface treatments that either promote or hinder adsorption of the precursor specie on different surfaces, allowing even more control over the deposition process. This work focuses on the tetrakisdiethylamide class of precursors for the deposition of nitrides and other films. By directing independent beams of these precursors and hydrogen radicals at different surfaces (inc. Si, SiO@sub 2@, and Au), deposition parameters of interest such as the sticking and reaction probabilities of these compounds have been measured as a function of temperature and surface preparation. The products evolved from the surface during each step of the deposition process, including the precursor ligands and surface reaction products, have also been measured using modulated beam mass spectrometry as a function of these same parameters. XPS analysis of the deposited films will also be presented. @FootnoteText@ @footnote 1@A. Satta et al. Spring MRS Meeting 2000 D6.5 @footnote 2@A. Sherman US Patent 5916365.