AVS 47th International Symposium
    Semiconductors Monday Sessions

Session SC1+EL+SS-MoM
Chemistry of Silicon Oxides and Nitrides

Monday, October 2, 2000, 8:20 am, Room 306
Moderator: E. Cartier, IBM


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Click a paper to see the details. Presenters are shown in bold type.

8:20am SC1+EL+SS-MoM1
Atomic-Order Thermal Nitridation of Si(100) and Subsequent Epitaxial Growth of Si
T. Watanabe, M. Sakuraba, T. Matsuura, J. Murota, Tohoku University, Japan
8:40am SC1+EL+SS-MoM2
The Role of Inter-dimer Interactions in NH@sub 3@ Dissociation on Si(100) - (2 x 1)
K.T. Queeney, Smith College, K. Raghavachari, Y.J. Chabal, Bell Laboratories, Lucent Technologies
9:00am SC1+EL+SS-MoM3
Quantum Chemical Study of Silicon Nitride Deposition Using Ammonia
Y. Widjaja, C.B. Musgrave, Stanford University
9:20am SC1+EL+SS-MoM4
Thermal Nitridation of Ultrathin Silicon Dioxide Films Using NH@sub 3@ Gas
O. Jintsugawa, M. Sakuraba, T. Matsuura, J. Murota, Tohoku University, Japan
9:40am SC1+EL+SS-MoM5 Invited Paper
Probing the Chemistry of Dielectric Thin Film Growth on Si Surfaces
L.D. Flores, J.E. Crowell, University of California, San Diego
10:20am SC1+EL+SS-MoM7
Thickness Control of an Ultrathin Oxide Film on Si(100)2x1 Synthesized by Ozone: A Kinetic Study on Initial Oxidation
K. Nakamura, A. Kurokawa, H. Itoh, S. Ichimura, Electrotechnical Laboratory, Japan
10:40am SC1+EL+SS-MoM8
FTIR at Liquid/Solid Interfaces: In-situ Studies of HF Etching of SiO@sub 2@ on Si(100)
K.T. Queeney, Smith College Department of Chemistry, E.E. Chaban, Y.J. Chabal, Bell Laboratories, Lucent Technologies