AVS 47th International Symposium
    Semiconductors Monday Sessions
       Session SC1+EL+SS-MoM

Paper SC1+EL+SS-MoM1
Atomic-Order Thermal Nitridation of Si(100) and Subsequent Epitaxial Growth of Si

Monday, October 2, 2000, 8:20 am, Room 306

Session: Chemistry of Silicon Oxides and Nitrides
Presenter: T. Watanabe, Tohoku University, Japan
Authors: T. Watanabe, Tohoku University, Japan
M. Sakuraba, Tohoku University, Japan
T. Matsuura, Tohoku University, Japan
J. Murota, Tohoku University, Japan
Correspondent: Click to Email
Atomic-order nitridation by NH@sub 3@ on Si(100) and subsequent Si growth by SiH@sub 4@ were investigated using an ultraclean low-pressure CVD system with a Xe flash lamp. Thermal nitridation on Si(100) at 400°C in an NH@sub 3@ environment with and without the flash lamp light irradiation is explained by Langmuir-type physical adsorption of NH@sub 3@ and nitridation by the adsorbed NH@sub 3@. The nitridation can be enhanced by Xe flash lamp light irradiation, and the N atom concentration tends to saturate to about 2.7x10@super 15@ cm@super -2@. In the Si deposition on the ultrathin silicon nitride, it is found that N desorption from the Si nitride films hardly occurs, and Si grew on silicon nitride, whose N atom concentrations are from about 2x10@super 14@ cm@super -2@ to about 2.7x10@super 15@ cm@super -2@, at 385°C in an SiH@sub 4@ environment with and without the flash lamp light irradiation. The incubation period of Si growth is observed and increases with increasing N atom concentration of the silicon nitride film. On the silicon nitride of N atom concentration of about 2x10@super 14@ cm@super -2@, the incubation period is hardly observed and it is found by RHEED measurements that Si epitaxially grew. Layer-by-layer growth control of silicon nitride is proposed by combining atomic-order nitridation on Si and atomic-layer growth of Si on the silicon nitride.