| AVS 47th International Symposium | |
| Semiconductors | Friday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | SC+EL-FrM1 Process Development For Small-Area GaN/AlGaN HBTs K.P. Lee, G. Dang, A.P. Zhang, F. Ren, University of Florida, J. Han, Sandia National Laboratories, W.S. Hobson, Lucent Technologies, Bell Laboratories, C.R. Abernathy, S.J. Pearton, University of Florida, J.W. Lee, Plasma Therm |
| 8:40am | SC+EL-FrM2 Morphology on HDP-Etched III-Nitride Materials T.-N. Kuo, J.-H. Yeh, H.-J. Lee, C.-A. Chen, D.G.-K. Jeng, Nano-Architect Research Corporation, Taiwan |
| 9:00am | SC+EL-FrM3 Effects of Etch Processing on Contacts to n-GaN R. Singh, C.R. Eddy, Jr., Boston University, H.M. Ng, Lucent Technologies, T.D. Moustakas, Boston University |
| 9:20am | SC+EL-FrM4 Invited Paper Growth of Ga(In)NAs/GaAs Alloys by Plasma-Assisted Molecular Beam Epitaxy A.L. Holmes, Jr., University of Texas at Austin |
| 10:00am | SC+EL-FrM6 Field Electron Emission and Surface Properties of as-grown and Modified AlGaN Films A. Bensaoula, I. Berishev, E. Kim, University of Houston, M. Ugarov, V. Ageev, E. Loubnin, A. Karabutov, General Physics Institute, Russia, A. Tempez, University of Houston |
| 10:20am | SC+EL-FrM7 Effect of Annealing and Carbon Concentration on the PL Intensity from GaN:Er and GaN:Eu M.E. Overberg, C.R. Abernathy, S.J. Pearton, University of Florida, J.M. Zavada, U.S. Army European Research Office, UK |
| 10:40am | SC+EL-FrM8 Invited Paper Probing Nanoscale Electronic Properties in Nitride Semiconductor Heterostructures E.T. Yu, K.V. Smith, X.Z. Dang, University of California, San Diego |
| 11:20am | SC+EL-FrM10 GaN and AlGaN Power Rectifiers A.P. Zhang, G. Dang, F. Ren, X.A. Cao, K.P. Lee, S.J. Pearton, University of Florida, J. Han, Sandia National Laboratories, J.I. Chyi, National Central University,Taiwan, C.M. Lee, C.C. Chuo, National Central University, Taiwan |
| 11:40am | SC+EL-FrM11 Growth and Characterization of Gadolinium Oxide Gate Dielectric on Gallium Nitride B.P. Gila, K.N. Lee, K.K. Harris, W. Johnson, V. Krishnamoorthy, C.R. Abernathy, F. Ren, S.J. Pearton, University of Florida |