AVS 47th International Symposium
    Semiconductors Friday Sessions
       Session SC+EL-FrM

Paper SC+EL-FrM2
Morphology on HDP-Etched III-Nitride Materials

Friday, October 6, 2000, 8:40 am, Room 306

Session: III-Nitride Processing and Devices
Presenter: D.G.-K. Jeng, Nano-Architect Research Corporation, Taiwan
Authors: T.-N. Kuo, Nano-Architect Research Corporation, Taiwan
J.-H. Yeh, Nano-Architect Research Corporation, Taiwan
H.-J. Lee, Nano-Architect Research Corporation, Taiwan
C.-A. Chen, Nano-Architect Research Corporation, Taiwan
D.G.-K. Jeng, Nano-Architect Research Corporation, Taiwan
Correspondent: Click to Email
Needle-shaped morphology or highly textured surface was often observed after GaN/GaInN multiple layered structures have been etched in high-density plasma; this phenomenon was not so often observed in structures containing GaN alone. It is attributed to layers containing indium under certain chemical environments. An experimental procedure was carried out for the characterization of materials etching. It turned out that the needle-shaped morphology or textured surface was possibly the consequence of a micro-masking effect due to low-vapor pressure compound formed on the etched surface, which prohibits underneath layers from being etched. The experiments were conducted in a high-density plasma equipment with a novel plasma source designed exclusively by the authoring group. This equipment has the capability for a typical etch-rate of 7000-8000 Å/min for all types of III-nitride compound materials and structures with good surface morphology.